- 专利标题: READ RETRY WITH TARGETED AUTO READ CALIBRATE
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申请号: US16193171申请日: 2018-11-16
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公开(公告)号: US20200159447A1公开(公告)日: 2020-05-21
- 发明人: Ting Luo , Kishore Kumar Muchherla , Harish Reddy Singidi , Xiangang Luo , Renato Padilla, JR. , Gary F. Besinga , Sampath Ratnam , Vamsi Pavan Rayaprolu
- 申请人: Micron Technology, Inc.
- 主分类号: G06F3/06
- IPC分类号: G06F3/06 ; G06F11/10 ; G11C29/52 ; G11C16/26 ; G11C16/34
摘要:
Various examples are directed to systems and methods for reading a memory component. A processing device may receive an indication that a read operation at a physical address of the memory component failed. The processing device may execute a plurality of read retry operations at the physical address. The processing device may access a first syndrome weight describing a first error correction operation performed on a result of a first read retry operation of the plurality of read retry operations and a second syndrome weight describing a second error correction operation performed on a result of a second read retry operation of the plurality of read retry operations. The processing device may select a first threshold voltage associated with the first read retry operation based at least in part on the first syndrome weight and the second syndrome weight. The processing device may also execute a first auto read calibrate operation at the physical address, the first auto read calibrate operation having a baseline at the first threshold voltage.
公开/授权文献
- US10915395B2 Read retry with targeted auto read calibrate 公开/授权日:2021-02-09