Invention Application
- Patent Title: MAGNETIC TUNNEL JUNCTIONS SUITABLE FOR HIGH TEMPERATURE THERMAL PROCESSING
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Application No.: US16773232Application Date: 2020-01-27
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Publication No.: US20200160884A1Publication Date: 2020-05-21
- Inventor: Lin XUE , Chi Hong CHING , Jaesoo AHN , Mahendra PAKALA , Rongjun WANG
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: G11B5/39
- IPC: G11B5/39 ; H01L21/768 ; G11C11/15 ; G11B5/31 ; G11C11/16
Abstract:
Embodiments herein provide film stacks that include a buffer layer; a synthetic ferrimagnet (SyF) coupling layer; and a capping layer, wherein the capping layer comprises one or more layers, and wherein the capping layer, the buffer layer, the SyF coupling layer, or a combination thereof, is not fabricated from Ru.
Public/Granted literature
- US11251364B2 Magnetic tunnel junctions suitable for high temperature thermal processing Public/Granted day:2022-02-15
Information query
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