Invention Grant
- Patent Title: Magnetic tunnel junctions suitable for high temperature thermal processing
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Application No.: US16773232Application Date: 2020-01-27
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Publication No.: US11251364B2Publication Date: 2022-02-15
- Inventor: Lin Xue , Chi Hong Ching , Jaesoo Ahn , Mahendra Pakala , Rongjun Wang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; G11C11/16 ; G11C11/15 ; H01L21/768 ; H01L45/00 ; H01L27/24 ; G11B5/31 ; G11B5/39
Abstract:
Embodiments herein provide film stacks that include a buffer layer; a synthetic ferrimagnet (SyF) coupling layer; and a capping layer, wherein the capping layer comprises one or more layers, and wherein the capping layer, the buffer layer, the SyF coupling layer, or a combination thereof, is not fabricated from Ru.
Public/Granted literature
- US20200160884A1 MAGNETIC TUNNEL JUNCTIONS SUITABLE FOR HIGH TEMPERATURE THERMAL PROCESSING Public/Granted day:2020-05-21
Information query
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