Invention Application
- Patent Title: BIPOLAR TRANSISTOR
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Application No.: US16551713Application Date: 2019-08-26
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Publication No.: US20200168705A1Publication Date: 2020-05-28
- Inventor: Chuan-Chen Chao , Po-Hsiang Yang
- Applicant: RichWave Technology Corp.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@79311ea6
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/737
Abstract:
A bipolar transistor includes a collector layer, a base layer on the collector layer, and a first elongated emitter mesa on the base layer having a long side and a short side, wherein the long side is parallel with a first direction, and n separate first emitter-contact structures disposed along the first direction on the first elongated emitter mesa, where n is an integer greater than one.
Public/Granted literature
- US11081548B2 Bipolar transistor Public/Granted day:2021-08-03
Information query
IPC分类:
