公开(公告)号：US11081548B2

公开(公告)日：2021-08-03

申请号：US16551713

申请日：2019-08-26

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao ,  Po-Hsiang Yang

IPC: H01L29/08 ,  H01L29/737

Abstract: A bipolar transistor includes a collector layer, a base layer on the collector layer, and a first elongated emitter mesa on the base layer having a long side and a short side, wherein the long side is parallel with a first direction, and n separate first emitter-contact structures disposed along the first direction on the first elongated emitter mesa, where n is an integer greater than one.

公开(公告)号：US20250125773A1

公开(公告)日：2025-04-17

申请号：US18393725

申请日：2023-12-22

Applicant: RichWave Technology Corp.

Inventor： Po-Hsiang Yang

IPC: H03F1/30 ,  H03F3/19 ,  H03F3/24

Abstract: A radio frequency circuit includes an amplifier circuit and a bias circuit. The amplifier circuit is configured to receive a bias signal and amplify a radio frequency signal. The bias circuit is coupled to the amplifier circuit, and is configured to provide the bias signal. The bias circuit includes a transistor and a resistor. The transistor is arranged near the amplifier circuit. The resistor is arranged near the amplifier circuit, and a first terminal of the resistor is coupled to a transmission line, and a second terminal of the resistor is coupled to a control terminal of the transistor. An interference signal is coupled to the transmission line. The resistor is located between the transistor and the transmission line.

公开(公告)号：US20200168705A1

公开(公告)日：2020-05-28

申请号：US16551713

申请日：2019-08-26

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao ,  Po-Hsiang Yang

IPC: H01L29/08 ,  H01L29/737

Abstract: A bipolar transistor includes a collector layer, a base layer on the collector layer, and a first elongated emitter mesa on the base layer having a long side and a short side, wherein the long side is parallel with a first direction, and n separate first emitter-contact structures disposed along the first direction on the first elongated emitter mesa, where n is an integer greater than one.