In an integrated circuit, a metal-insulator-metal (MIM) diode includes: a first metallization structure level having a first metal layer; a first dielectric layer over the first metal layer; a metal contact or via on the first metal layer and extending through a portion of the first dielectric layer; and a second metallization structure level having a second metal layer; and a second dielectric layer over the second metal layer. The diode has a first electrode on the metal contact or via, a multilayer dielectric structure on the first electrode, and a second electrode between the multilayer dielectric structure and the second metal layer.