Invention Application
- Patent Title: ANTI-RADIATION STRUCTURE, TEMPERATURE-PRESSURE COMPLEX SENSOR INCLUDING THE SAME AND HAVING ANTI-RADIATION PROPERTY, AND MANUFACTURING METHOD THEREOF
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Application No.: US16566221Application Date: 2019-09-10
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Publication No.: US20200170149A1Publication Date: 2020-05-28
- Inventor: Seong Jun KIM , Choon Gi CHOI , Tam Van Nguyen , Bok Ki MIN , Shuvra MONDAL , Yoonsik YI
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@118e7197 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@413b7189
- Main IPC: H05K9/00
- IPC: H05K9/00 ; G01L1/22 ; G01K7/22 ; B82Y15/00 ; B82Y30/00

Abstract:
Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.
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