Invention Application
- Patent Title: Cut Metal Gate Devices and Processes
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Application No.: US16680755Application Date: 2019-11-12
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Publication No.: US20200176259A1Publication Date: 2020-06-04
- Inventor: Chun-Yi Lee , Ting-Gang Chen , Chieh-Ping Wang , Hong-Hsien Ke , Chia-Hui Lin , Tai-Chun Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/8234 ; H01L21/02 ; H01L21/3213
Abstract:
A method includes etching a gate structure to form a trench extending into the gate structure, wherein sidewalls of the trench comprise a metal oxide material, applying a sidewall treatment process to the sidewalls of the trench, wherein the metal oxide material has been removed as a result of applying the sidewall treatment process and filling the trench with a first dielectric material to form a dielectric region, wherein the dielectric region is in contact with the sidewall of the gate structure.
Public/Granted literature
- US11152262B2 Cut metal gate devices and processes Public/Granted day:2021-10-19
Information query
IPC分类:
