Invention Application
- Patent Title: INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL MEMORY DEVICE
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Application No.: US16784900Application Date: 2020-02-07
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Publication No.: US20200176375A1Publication Date: 2020-06-04
- Inventor: Young-jin Jung , Joon-hee Lee
- Applicant: Samsung Electronics Co., Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3a6fc8c1
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/11582 ; H01L27/11556 ; H01L27/11565 ; H01L27/1157

Abstract:
Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.
Public/Granted literature
- US10811356B2 Integrated circuit devices including a vertical memory device Public/Granted day:2020-10-20
Information query
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