Invention Application
- Patent Title: HIGH DENSITY SELF-ROUTING METAL-OXIDE-METAL CAPACITOR
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Application No.: US16209768Application Date: 2018-12-04
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Publication No.: US20200176555A1Publication Date: 2020-06-04
- Inventor: Baozhen Chen , Lalinda D. Fernando , Micah Galletta O'Halloran , Andrew Wayne Shaw
- Applicant: Analog Devices, Inc.
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/02

Abstract:
A self-routing capacitor for an integrated circuit having: a first electrode comprising a first base region and a first finger, the first finger extending from a wall of the first base region in a first direction; a second electrode comprising a second base region and a second finger, the second finger extending from a wall of the second base region in a second direction substantially parallel to and opposing the first direction, the second finger coupled to the first finger; a third electrode comprising a third base region and a third finger, the third finger extending from a first wall of the third base in the second direction; and a fourth electrode comprising a fourth finger, the fourth finger extending from a second wall of the third base region in the first direction. The capacitor being coupled to other metal layers through a base region of an electrode.
Public/Granted literature
- US10692967B1 High density self-routing metal-oxide-metal capacitor Public/Granted day:2020-06-23
Information query
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