HIGH DENSITY SELF-ROUTING METAL-OXIDE-METAL CAPACITOR

    公开(公告)号:US20200176555A1

    公开(公告)日:2020-06-04

    申请号:US16209768

    申请日:2018-12-04

    IPC分类号: H01L49/02 H01L27/02

    摘要: A self-routing capacitor for an integrated circuit having: a first electrode comprising a first base region and a first finger, the first finger extending from a wall of the first base region in a first direction; a second electrode comprising a second base region and a second finger, the second finger extending from a wall of the second base region in a second direction substantially parallel to and opposing the first direction, the second finger coupled to the first finger; a third electrode comprising a third base region and a third finger, the third finger extending from a first wall of the third base in the second direction; and a fourth electrode comprising a fourth finger, the fourth finger extending from a second wall of the third base region in the first direction. The capacitor being coupled to other metal layers through a base region of an electrode.

    High density self-routing metal-oxide-metal capacitor

    公开(公告)号:US10692967B1

    公开(公告)日:2020-06-23

    申请号:US16209768

    申请日:2018-12-04

    IPC分类号: H01L49/02 H01L27/02

    摘要: A self-routing capacitor for an integrated circuit having: a first electrode comprising a first base region and a first finger, the first finger extending from a wall of the first base region in a first direction; a second electrode comprising a second base region and a second finger; the second finger extending from a wall of the second base region in a second direction substantially parallel to and opposing the first direction, the second finger coupled to the first finger; a third electrode comprising a third base region and a third finger, the third finger extending from a first wall of the third base in the second direction; and a fourth electrode comprising a fourth finger, the fourth finger extending from a second wall of the third base region in the first direction. The capacitor being coupled to other metal layers through a base region of an electrode.