Invention Application
- Patent Title: Methods For Selective Deposition Of Dielectric On Silicon Oxide
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Application No.: US16647794Application Date: 2018-09-19
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Publication No.: US20200216949A1Publication Date: 2020-07-09
- Inventor: Bhaskar Jyoti Bhuyan , Mark Saly , David Thompson , Lakmal C. Kalutarage , Rana Howlader
- Applicant: Applied Materials, Inc.
- International Application: PCT/US2018/051749 WO 20180919
- Main IPC: C23C16/04
- IPC: C23C16/04 ; C23C16/455 ; H01L21/02

Abstract:
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.
Public/Granted literature
- US11371136B2 Methods for selective deposition of dielectric on silicon oxide Public/Granted day:2022-06-28
Information query
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