Invention Application
- Patent Title: Boron-Based Capping Layers for EUV Optics
-
Application No.: US16413740Application Date: 2019-05-16
-
Publication No.: US20200217804A1Publication Date: 2020-07-09
- Inventor: Gildardo R. Delgado , Shannon B. Hill , Zefram Marks
- Applicant: KLA-TENCOR CORPORATION
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G03F7/16 ; H01L31/0216 ; H01L27/146

Abstract:
Disclosed herein are optical elements and methods for making the same. Such optical elements may comprise a first layer disposed on a substrate, a second layer disposed on the first layer, a terminal layer disposed on the second layer, and a cap layer disposed on the terminal layer. The cap layer may comprise boron, boron nitride, or boron carbide. Such optical elements may be made using a method comprising depositing a first layer using vapor deposition such that the first layer is disposed on a substrate, depositing a second layer using vapor deposition such that the second layer is disposed on the first layer, depositing a terminal layer using vapor deposition such that the terminal layer is disposed on the second layer, and depositing a cap layer comprising boron, boron nitride, or boron carbide using vapor deposition such that the cap layer is disposed on the terminal layer.
Public/Granted literature
- US11268911B2 Boron-based capping layers for EUV optics Public/Granted day:2022-03-08
Information query