Methods, apparatuses, and systems related to patterning a material over a sense line contact are described. An example method includes forming a sense line contact pattern at an angle to a sense line direction over semiconductor structures on a substrate, wherein the angle to the sense line direction is formed along a path between a sense line contact in a first sense line column and a sense line contact in a second sense line column. The example method further includes removing a portion of a mask material corresponding to the sense line contact pattern to form sense line contacts.