- 专利标题: CIRCUIT EMPLOYING MOSFETS AND CORRESPONDING METHOD
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申请号: US16786182申请日: 2020-02-10
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公开(公告)号: US20200259473A1公开(公告)日: 2020-08-13
- 发明人: Sandor PETENYI
- 申请人: STMicroelectronics Design and Application S.R.O.
- 申请人地址: CZ Prague
- 专利权人: STMicroelectronics Design and Application S.R.O.
- 当前专利权人: STMicroelectronics Design and Application S.R.O.
- 当前专利权人地址: CZ Prague
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5484028e
- 主分类号: H03F3/45
- IPC分类号: H03F3/45 ; H03F1/30 ; H03F1/02
摘要:
A MOSFET has a current conduction path between source and drain terminals. A gate terminal of the MOSFET receives an input signal to facilitate current conduction in the current conduction path as a result of a gate-to-source voltage reaching a threshold voltage. A body terminal of the MOSFET is coupled to body voltage control circuitry that is sensitive to the voltage at the gate terminal of the MOSFET. The body voltage control circuitry responds to a reduction in the voltage at the gate terminal of the MOSFET by increasing the body voltage of the MOSFET at the body terminal of the MOSFET. As a result, there is reduction in the threshold voltage. The circuit configuration is applicable to amplifier circuits, comparator circuits and current mirror circuits.
公开/授权文献
- US11082018B2 Circuit employing MOSFETs and corresponding method 公开/授权日:2021-08-03
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