Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
-
Application No.: US16520990Application Date: 2019-07-24
-
Publication No.: US20200273698A1Publication Date: 2020-08-27
- Inventor: Jeonggyu SONG , Kyooho JUNG , Yongsung KIM , Jeongil BANG , Jooho LEE , Junghwa KIM , Haeryong KIM , Myoungho JEONG
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@64ca73f2
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L29/66 ; H01L21/768
Abstract:
A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.
Information query
IPC分类:
