公开(公告)号：US20240429043A1

公开(公告)日：2024-12-26

申请号：US18504712

申请日：2023-11-08

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Jeonggyu SONG ,  Ilkwon OH ,  Beomseok KIM ,  Jooho LEE ,  Wonsik CHOI ,  Byungjun WON ,  Minjeong RHEE

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Provided is a method of forming an insulating film on a substrate by using atomic layer deposition (ALD). The method of forming an insulating film on a substrate by using ALD includes transferring a deposition-hindering material to the substrate, and depositing a first material layer by transferring a first precursor to the deposition-hindering material, wherein the deposition-hindering material includes an organic ligand, and the first precursor includes an alkoxide ligand.

公开(公告)号：US20240234031A1

公开(公告)日：2024-07-11

申请号：US18351171

申请日：2023-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Narae HAN ,  Jeonggyu SONG ,  Beomseok KIM ,  Cheheung KIM ,  Haeryong KIM ,  Jooho LEE

IPC: H01G4/10 ,  H01L29/51 ,  H01L29/94 ,  H10B12/00

CPC classification number: H01G4/10 ,  H01L28/60 ,  H01L28/65 ,  H01L29/511 ,  H01L29/517 ,  H01L29/94 ,  H10B12/31 ,  H01G4/008

Abstract: A semiconductor device includes a first electrode, a second electrode spaced apart from the first electrode, a dielectric layer between the first electrode and the second electrode and including a metal oxide represented by MaOb, and a leakage current reducing layer on the dielectric layer between the first electrode and the second electrode and including an inorganic compound represented by Alx1Lx2Oy1Xy2, where a, b, M, L, X, x1, x2, y1, and y2 are as described in the description.

公开(公告)号：US20240170212A1

公开(公告)日：2024-05-23

申请号：US18350600

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Eunae CHO ,  Narae HAN ,  Beomseok KIM ,  Cheheung KIM ,  Jooho LEE ,  Wonsik CHOI

IPC: H01G4/10 ,  H01L29/51 ,  H01L29/94 ,  H10B12/00

CPC classification number: H01G4/10 ,  H01L28/60 ,  H01L28/65 ,  H01L29/511 ,  H01L29/517 ,  H01L29/94 ,  H10B12/31 ,  H01G4/1236

Abstract: A capacitor, a semiconductor device, and an electronic apparatus including the semiconductor device are disclosed. The capacitor includes a first electrode; a second electrode disposed apart from the first electrode; a dielectric film between the first electrode and the second electrode; and a leakage current reducing layer provided on the dielectric film between the first electrode and the second electrode and including MxAlyOz.

公开(公告)号：US20240297210A1

公开(公告)日：2024-09-05

申请号：US18662107

申请日：2024-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Eunae CHO ,  Yongsung KIM ,  Boeun PARK ,  Narae HAN

IPC: H01G4/10

CPC classification number: H01L28/75 ,  H01G4/10

Abstract: A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).

公开(公告)号：US20230223426A1

公开(公告)日：2023-07-13

申请号：US18175095

申请日：2023-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Younsoo KIM ,  Jaeho LEE

IPC: H01L29/94

CPC classification number: H01L28/40 ,  H10B12/31 ,  H01L28/75

Abstract: A capacitor includes: a bottom electrode; a top electrode over the bottom electrode; a dielectric film between the bottom electrode and the top electrode; and a doped Al2O3 film between the top electrode and the dielectric film, wherein the doped Al2O3 film includes a first dopant, and an oxide including the same element as the first dopant has a higher dielectric constant than a dielectric constant of Al2O3.

公开(公告)号：US20210384194A1

公开(公告)日：2021-12-09

申请号：US17172131

申请日：2021-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Su WOO ,  Haeryong KIM ,  Younsoo KIM ,  Sunmin MOON ,  Jeonggyu SONG ,  Kyooho JUNG

IPC: H01L27/108

Abstract: A semiconductor device includes conductive pillars on a semiconductor substrate, a first support pattern that contacts first portions of lateral surfaces of the conductive pillars and connects the conductive pillars to each other, the first support pattern including first support holes that expose second portions of the lateral surfaces of the conductive pillars, a capping conductive pattern that contacts the second portions of the lateral surfaces of the conductive pillars and exposes the first support pattern, the second portions of the lateral surfaces of the conductive pillars being in no contact with the first support pattern, and a dielectric layer that covers the first support pattern and the capping conductive pattern, the dielectric layer being spaced apart from the conductive pillars.

公开(公告)号：US20210115564A1

公开(公告)日：2021-04-22

申请号：US16827862

申请日：2020-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-Eun PARK ,  Jooho LEE ,  Yongsung KIM ,  Jeonggyu SONG

IPC: C23C16/56 ,  H01L27/11585 ,  H01L27/11502 ,  C23C16/455 ,  C23C14/58 ,  C23C14/08 ,  C23C16/40 ,  C01G27/02

Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.

公开(公告)号：US20200273698A1

公开(公告)日：2020-08-27

申请号：US16520990

申请日：2019-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Kyooho JUNG ,  Yongsung KIM ,  Jeongil BANG ,  Jooho LEE ,  Junghwa KIM ,  Haeryong KIM ,  Myoungho JEONG

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.

公开(公告)号：US20240363679A1

公开(公告)日：2024-10-31

申请号：US18765887

申请日：2024-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boeun PARK ,  Yongsung KIM ,  Jeonggyu SONG ,  Jooho LEE

IPC: H01G4/30 ,  H10B53/00

CPC classification number: H01L28/56 ,  H10B53/00

Abstract: An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.

公开(公告)号：US20230420490A1

公开(公告)日：2023-12-28

申请号：US18465439

申请日：2023-09-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Kyooho JUNG ,  Younsoo KIM ,  Haeryong KIM ,  Jooho LEE

IPC: H10B12/00 ,  H01L21/285

CPC classification number: H01L28/60 ,  H01L21/28556 ,  H10B12/30

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.