- 专利标题： ATOMIC LAYER DEPOSITION SYSTEMS, METHODS, AND DEVICES
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申请号： US16745132申请日： 2020-01-16
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公开(公告)号： US20200283895A1公开(公告)日： 2020-09-10
- 发明人: Riyan Alex Mendonsa , Martin Giles Blaber , Brett R. Herdendorf , Kevin A. Gomez
- 申请人： Seagate Technology LLC
- 主分类号： C23C16/455
- IPC分类号： C23C16/455 ; C23C16/48 ; G11B13/08 ; C23C16/46 ; G11B5/31 ; H01L21/67 ; H01L21/02
摘要：
A system includes a chamber, a support structure disposed in the chamber, and one or more heads. The support structure is configured to support and position a substrate. The one or more heads includes an energy source coupled to a near-field transducer for providing localized energy towards the support structure at select locations within the chamber.
公开/授权文献
- US11377736B2 Atomic layer deposition systems, methods, and devices 公开/授权日：2022-07-05
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