Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US16887011Application Date: 2020-05-29
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Publication No.: US20200295018A1Publication Date: 2020-09-17
- Inventor: Tomohiro YAMASHITA
- Applicant: Renesas Electronics Corporation
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3b453dc6
- Main IPC: H01L27/11521
- IPC: H01L27/11521 ; H01L27/11568 ; H01L21/28 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/792 ; H01L27/1157 ; H01L27/11573 ; H01L27/12 ; H01L21/8234 ; H01L29/78
Abstract:
A semiconductor device includes: a fin that is a portion of a semiconductor substrate, protrudes from a main surface of the semiconductor substrate, has a width in a first direction, and extends in a second direction; a control gate electrode that is arranged on the fin via a first gate insulating film and extends in the first direction; and a memory gate electrode that is arranged on the fin via a second gate insulating film and extends in the first direction. Further, a width of the fin in a region in which the memory gate electrode is arranged via the second gate insulating film having a film thickness larger than the first gate insulating film is smaller than a width of the fin in a region in which the control gate electrode is arranged via the first gate insulating film.
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Information query
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