A three-dimensional (3D) memory device includes multiple decks of memory cells. Each deck includes layers of material, including a layer of storage material (e.g., a phase change material). Each deck also includes an interlayer between the phase change material and conductive access lines. The interlayer can include, for example, one or more of tungsten, carbon, silicon, silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, and titanium silicon nitride. In one such example, the interlayer includes tungsten silicon nitride (WSiN). The interlayers of different decks have different properties, such as different thicknesses or resistivities, to reduce or eliminate the deck-to-deck reset current offset.