Invention Application
- Patent Title: DEVICE OF PROTECTION AGAINST ELECTROSTATIC DISCHARGES
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Application No.: US16834329Application Date: 2020-03-30
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Publication No.: US20200321330A1Publication Date: 2020-10-08
- Inventor: Eric LACONDE , Olivier ORY
- Applicant: STMicroelectronics (Tours) SAS
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@47a3baf9
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/87 ; H01L29/866

Abstract:
A semiconductor substrate of a first conductivity type is coated with a semiconductor layer of a second conductivity type. A buried region of the second conductivity type is formed an interface between the semiconductor substrate and the semiconductor layer. First and second wells of the first conductivity type are provided in the semiconductor layer. A second region of the second conductivity type is formed in the first well. A third region of the second conductivity type is formed in the second well. The first well, the semiconducting layer, the second well and the third region form a first lateral thyristor. The second well, the semiconductor layer, the first well and the second region form a second lateral thyristor. The buried region and semiconductor substrate form a zener diode which sets the trigger voltage for the lateral thyristors.
Public/Granted literature
- US11437365B2 Device of protection against electrostatic discharges Public/Granted day:2022-09-06
Information query
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