Invention Application
- Patent Title: FILM FORMATION APPARATUS AND FILM FORMATION METHOD
-
Application No.: US16856650Application Date: 2020-04-23
-
Publication No.: US20200340117A1Publication Date: 2020-10-29
- Inventor: Daisuke Ono , Akihiko Ito
- Applicant: Shibaura Mechatronics Corporation
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@10cbce88 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@ac46224
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C23C16/452 ; C23C16/458 ; C23C16/24 ; C23C16/40

Abstract:
According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.
Public/Granted literature
- US11505866B2 Film formation apparatus and film formation method Public/Granted day:2022-11-22
Information query
IPC分类: