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公开(公告)号：US20200340117A1
公开(公告)日：2020-10-29
申请号：US16856650
申请日：2020-04-23
Applicant: Shibaura Mechatronics Corporation
Inventor： Daisuke Ono , Akihiko Ito
IPC: C23C16/50 , C23C16/452 , C23C16/458 , C23C16/24 , C23C16/40
Abstract: According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.
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公开(公告)号：US11004665B2
公开(公告)日：2021-05-11
申请号：US15941817
申请日：2018-03-30
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Yoshio Kawamata , Daisuke Ono
IPC: H01J37/34 , H01J37/32 , H01L21/687 , H01L21/02 , H01L21/285
Abstract: A plasma processing apparatus includes a vacuum container, a conveyance unit including a rotator and circulating and carrying a workpiece through the conveyance path, a cylindrical member having an opening at one end extended in the direction toward the conveyance path, a window member provided at the cylindrical member, and dividing a gas space from the exterior thereof, a supply unit supplying the process gas in the gas space, and an antenna generating inductive coupling plasma on the workpiece. The supply unit supplies the process gas from plural locations where a passing time at which the surface of the rotator passes through a process region is different, and the plasma processing apparatus further includes an adjusting unit individually adjusting the supply amounts of the process gas from the plural locations of the supply unit per a unit time in accordance with the passing time.
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公开(公告)号：US10903059B2
公开(公告)日：2021-01-26
申请号：US16123709
申请日：2018-09-06
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Daisuke Ono , Yu Kambe
IPC: C23C14/34 , H01J37/34 , H01J37/32 , C23C14/00 , C23C14/50 , H01L21/687 , C23C14/08 , H01L21/02 , H01L21/285
Abstract: A film formation apparatus includes a chamber which has an interior capable of being vacuumed, and which includes a lid that is openable and closable on the upper part of the chamber, a rotation table which is provided in the chamber and which and carries a workpiece in the circular trajectory, a film formation unit that deposits film formation materials by sputtering on the workpiece carried by the rotation table to form films, a shielding member which is provided with an opening at the side which the workpiece passes through, and which forms a film formation room where the film formations by the film formation units are performed, and a support which supports the shielding member, and which is independent relative to the chamber and is independent from the lid.
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Patent Agency Ranking
公开(公告)号：US11505866B2
公开(公告)日：2022-11-22
申请号：US16856650
申请日：2020-04-23
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Daisuke Ono , Akihiko Ito
IPC: C23C14/00 , C23C14/58 , C23C14/56 , H01J37/32 , H01J37/34 , C23C16/50 , C23C16/452 , C23C16/40 , C23C16/24 , C23C16/458
Abstract: According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.
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公开(公告)号：US11211233B2
公开(公告)日：2021-12-28
申请号：US16585525
申请日：2019-09-27
Applicant: Shibaura Mechatronics Corporation
Inventor： Daisuke Ono
Abstract: According to one embodiment, a film formation apparatus includes a chamber having an interior to be vacuumed, a carrying unit which is provided in the chamber, and which carries a workpiece that has a processing target surface in a solid shape along a circular carrying path, a film formation unit that causes a film formation material to be deposited by sputtering on the workpiece that is being carried by the carrying unit to form a film thereon, and a shielding member which has an opening located at a side where the workpiece passes through, and which forms a film formation chamber where the film formation by the film formation unit is performed. A compensation plate that protrudes in the film formation chamber is provided, and the compensation plate has a solid shape along a shape of the processing target surface of the workpiece, and is provided at a position facing the workpiece.
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公开(公告)号：US10896841B2
公开(公告)日：2021-01-19
申请号：US16143927
申请日：2018-09-27
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Daisuke Ono
Abstract: A film formation apparatus includes a film formation unit which includes a film formation room having an opening at one end, has a target formed of a film formation material in the film formation room, and deposits the film formation material of the target on a surface of a workpiece facing the opening by plasma produced by a sputter gas in the film formation room, and a carrier that carries the workpiece along a predetermined carrying path so that the workpiece repeatedly pass through a facing region which faces the opening of the film formation room and a non-facing region which does not face the opening of the film formation room. The carrier includes a low-pressure position where the workpiece is placed and which causes an interior of the film formation room to be lower than a plasma ignition lower limit pressure and to be equal to or higher than a plasma electric discharge maintaining lower limit pressure when passing through the facing region, and a high-pressure position where workpiece is not placed and which causes the interior of the film formation room to be equal to or higher than the plasma ignition lower limit pressure when passing through the facing region.
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公开(公告)号：US20170268098A1
公开(公告)日：2017-09-21
申请号：US15461906
申请日：2017-03-17
Applicant: Shibaura Mechatronics Corporation
Inventor： Daisuke Ono
CPC classification number: C23C14/3457 , C23C14/0042 , C23C14/086 , C23C14/54 , H01J37/32449 , H01J37/3426 , H01J37/347 , H01J37/3476
Abstract: A film formation apparatus includes a chamber that is a sealed container in which a target formed of a film formation material is placed, and into which the workpiece is carried, a gas discharging unit discharging a gas in the sealed container for a predetermined time period after the workpiece is carried into the chamber to obtain a base pressure, and a sputter gas introducing unit introducing a sputter gas containing oxygen to the interior of the chamber having undergone the discharging and becoming the base pressure. The sputter gas introducing unit decreases an oxygen partial pressure in the sputter gas to be introduced in the chamber in accordance with an increase in the base pressure due to an increase of the film formation material sticking to the interior of the chamber.
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公开(公告)号：US10260145B2
公开(公告)日：2019-04-16
申请号：US15461906
申请日：2017-03-17
Applicant: Shibaura Mechatronics Corporation
Inventor： Daisuke Ono
Abstract: A film formation apparatus includes a chamber that is a sealed container in which a target formed of a film formation material is placed, and into which the workpiece is carried, a gas discharging unit discharging a gas in the sealed container for a predetermined time period after the workpiece is carried into the chamber to obtain a base pressure, and a sputter gas introducing unit introducing a sputter gas containing oxygen to the interior of the chamber having undergone the discharging and becoming the base pressure. The sputter gas introducing unit decreases an oxygen partial pressure in the sputter gas to be introduced in the chamber in accordance with an increase in the base pressure due to an increase of the film formation material sticking to the interior of the chamber.
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