Invention Application
- Patent Title: SEMICONDUCTOR SUBSTRATE
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Application No.: US16783045Application Date: 2020-02-05
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Publication No.: US20210005750A1Publication Date: 2021-01-07
- Inventor: Wei-Ting Lin , Dean Wang , Chun-Cheng Cheng
- Applicant: Au Optronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Priority: TW108123501 20190703
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/24 ; H01L27/12 ; H01L33/62 ; H01L29/66
Abstract:
A semiconductor substrate includes a substrate, a first metal oxide semiconductor layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, and a second metal oxide semiconductor layer. The first transistor includes a first metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a first gate of the first conductive layer, a first source of the second conductive layer, and a first drain of the second conductive layer. The second transistor includes a second metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a second gate of the first conductive layer, a second source of the second conductive layer, a second drain of the second conductive layer, and a third metal oxide semiconductor pattern of the second metal oxide semiconductor layer.
Public/Granted literature
- US11121261B2 Semiconductor substrate Public/Granted day:2021-09-14
Information query
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