公开(公告)号：US20210005750A1

公开(公告)日：2021-01-07

申请号：US16783045

申请日：2020-02-05

Applicant: Au Optronics Corporation

Inventor： Wei-Ting Lin ,  Dean Wang ,  Chun-Cheng Cheng

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L33/62 ,  H01L29/66

Abstract: A semiconductor substrate includes a substrate, a first metal oxide semiconductor layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, and a second metal oxide semiconductor layer. The first transistor includes a first metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a first gate of the first conductive layer, a first source of the second conductive layer, and a first drain of the second conductive layer. The second transistor includes a second metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a second gate of the first conductive layer, a second source of the second conductive layer, a second drain of the second conductive layer, and a third metal oxide semiconductor pattern of the second metal oxide semiconductor layer.

公开(公告)号：US11121261B2

公开(公告)日：2021-09-14

申请号：US16783045

申请日：2020-02-05

Applicant: Au Optronics Corporation

Inventor： Wei-Ting Lin ,  Dean Wang ,  Chun-Cheng Cheng

IPC: H01L27/00 ,  H01L29/00 ,  H01L33/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L33/62

Abstract: A semiconductor substrate includes a substrate, a first metal oxide semiconductor layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, and a second metal oxide semiconductor layer. The first transistor includes a first metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a first gate of the first conductive layer, a first source of the second conductive layer, and a first drain of the second conductive layer. The second transistor includes a second metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a second gate of the first conductive layer, a second source of the second conductive layer, a second drain of the second conductive layer, and a third metal oxide semiconductor pattern of the second metal oxide semiconductor layer.

公开(公告)号：US09278512B2

公开(公告)日：2016-03-08

申请号：US14167350

申请日：2014-01-29

Applicant: AU Optronics Corporation

Inventor： Shuo-Yang Sun ,  Wan-Chen Huang ,  Wei-Ting Lin ,  Chun-Cheng Cheng

IPC: B29C65/52 ,  B32B37/12 ,  B32B37/26 ,  B32B38/04 ,  B32B38/10 ,  B32B43/00 ,  H01L21/683 ,  B32B38/00

CPC classification number: B32B38/10 ,  B32B37/1284 ,  B32B38/0004 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: A substrate bonding and debonding method includes the steps of: providing a substrate; forming a first silicone glue layer on a peel-off region of the substrate and a second silicone glue layer on a peripheral region of the substrate, in which the first and second silicone glue layers contain the same silicone main agent and silicone curing agent in a different ratio; adhering an opposite substrate to the first and second silicone glue layers; curing the first and second silicone glue layers to bond the substrate to the opposite substrate; and separating a portion of the substrate from the opposite substrate.

Abstract translation: 基板接合和剥离方法包括以下步骤：提供基板; 在所述基板的剥离区域上形成第一硅胶层，以及在所述基板的周边区域上形成第二硅胶层，其中所述第一和第二硅胶层在其中包含相同的硅氧烷主剂和硅氧烷固化剂 不同比例 将相对的基板粘附到第一和第二硅胶层上; 固化第一和第二硅胶层以将基底粘合到相对的基底上; 以及将衬底的一部分与相对衬底分离。