- 专利标题: MEMORY DEVICE AND ELECTRONIC DEVICE
-
申请号: US17041037申请日: 2019-03-20
-
公开(公告)号: US20210027828A1公开(公告)日: 2021-01-28
- 发明人: Shunpei YAMAZAKI , Kiyoshi KATO , Takahiko ISHIZU , Tatsuya ONUKI
- 申请人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址: JP ATSUGI-SHI, KANAGAWA-KEN
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP ATSUGI-SHI, KANAGAWA-KEN
- 优先权: JP2018-065571 20180329,JP2018-169247 20180910
- 国际申请: PCT/IB2019/052244 WO 20190320
- 主分类号: G11C11/408
- IPC分类号: G11C11/408 ; H01L27/105 ; H01L27/12 ; H01L29/24 ; H01L29/786
摘要:
A memory device having long data retention time and high reliability is provided. The memory device includes a driver circuit and a plurality of memory cells, the memory cell includes a transistor and a capacitor, and the transistor includes a metal oxide in a channel formation region. The transistor includes a first gate and a second gate, and in a period during which the memory cell retains data, negative potentials are applied to the first gate and the second gate of the transistor.