- 专利标题： PASSIVATED TRANSISTORS
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申请号： US16518381申请日： 2019-07-22
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公开(公告)号： US20210028295A1公开(公告)日： 2021-01-28
- 发明人: ISHAN WATHUTHANTHRI , KEN ALFRED NAGAMATSU , WILLIAM J. SWEET , JAMES T. KELLIHER , JOHN S. MASON, JR. , JONAH PAUL SENGUPTA
- 申请人： ISHAN WATHUTHANTHRI , KEN ALFRED NAGAMATSU , WILLIAM J. SWEET , JAMES T. KELLIHER , JOHN S. MASON, JR. , JONAH PAUL SENGUPTA
- 申请人地址： US MD BALTIMORE; US MD ELLICOTT CITY; US MD BALTIMORE; US MD ELKRIDGE; US MD PASADENA; US MD BALTIMORE
- 专利权人： ISHAN WATHUTHANTHRI,KEN ALFRED NAGAMATSU,WILLIAM J. SWEET,JAMES T. KELLIHER,JOHN S. MASON, JR.,JONAH PAUL SENGUPTA
- 当前专利权人： ISHAN WATHUTHANTHRI,KEN ALFRED NAGAMATSU,WILLIAM J. SWEET,JAMES T. KELLIHER,JOHN S. MASON, JR.,JONAH PAUL SENGUPTA
- 当前专利权人地址： US MD BALTIMORE; US MD ELLICOTT CITY; US MD BALTIMORE; US MD ELKRIDGE; US MD PASADENA; US MD BALTIMORE
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/56 ; H01L23/31 ; H01L29/15 ; H01L29/06 ; H01L29/778
摘要：
A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.
公开/授权文献
- US11342440B2 Passivated transistors 公开/授权日：2022-05-24
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