公开(公告)号：US10985243B2

公开(公告)日：2021-04-20

申请号：US16992244

申请日：2020-08-13

申请人： Josephine Bea Chang ,  Eric J. Stewart ,  Ken Alfred Nagamatsu ,  Robert S. Howell ,  Shalini Gupta

发明人： Josephine Bea Chang ,  Eric J. Stewart ,  Ken Alfred Nagamatsu ,  Robert S. Howell ,  Shalini Gupta

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L23/29 ,  H01L23/31 ,  H01L29/15 ,  H01L29/423 ,  H01L21/02 ,  H01L21/306 ,  H01L29/778 ,  H01L29/66

摘要： A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.

公开(公告)号：US10784341B2

公开(公告)日：2020-09-22

申请号：US16252952

申请日：2019-01-21

申请人： Josephine Bea Chang ,  Eric J. Stewart ,  Ken Alfred Nagamatsu ,  Robert S. Howell ,  Shalini Gupta

发明人： Josephine Bea Chang ,  Eric J. Stewart ,  Ken Alfred Nagamatsu ,  Robert S. Howell ,  Shalini Gupta

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L23/29 ,  H01L23/31 ,  H01L29/15 ,  H01L29/423 ,  H01L21/02 ,  H01L21/306 ,  H01L29/778 ,  H01L29/66

摘要： A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.

公开(公告)号：US20210028295A1

公开(公告)日：2021-01-28

申请号：US16518381

申请日：2019-07-22

申请人： ISHAN WATHUTHANTHRI ,  KEN ALFRED NAGAMATSU ,  WILLIAM J. SWEET ,  JAMES T. KELLIHER ,  JOHN S. MASON, JR. ,  JONAH PAUL SENGUPTA

发明人： ISHAN WATHUTHANTHRI ,  KEN ALFRED NAGAMATSU ,  WILLIAM J. SWEET ,  JAMES T. KELLIHER ,  JOHN S. MASON, JR. ,  JONAH PAUL SENGUPTA

IPC分类号： H01L29/66 ,  H01L21/56 ,  H01L23/31 ,  H01L29/15 ,  H01L29/06 ,  H01L29/778

摘要： A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.

公开(公告)号：US20200235202A1

公开(公告)日：2020-07-23

申请号：US16252952

申请日：2019-01-21

申请人： JOSEPHINE BEA CHANG ,  ERIC J. STEWART ,  KEN ALFRED NAGAMATSU ,  ROBERT S. HOWELL ,  SHALINI GUPTA

发明人： JOSEPHINE BEA CHANG ,  ERIC J. STEWART ,  KEN ALFRED NAGAMATSU ,  ROBERT S. HOWELL ,  SHALINI GUPTA

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L23/29 ,  H01L23/31 ,  H01L29/15 ,  H01L29/423 ,  H01L21/02 ,  H01L21/306 ,  H01L29/778 ,  H01L29/66

摘要： A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.

公开(公告)号：US11342440B2

公开(公告)日：2022-05-24

申请号：US16518381

申请日：2019-07-22

申请人： Ishan Wathuthanthri ,  Ken Alfred Nagamatsu ,  William J. Sweet ,  James T. Kelliher ,  John S. Mason, Jr. ,  Jonah Paul Sengupta

发明人： Ishan Wathuthanthri ,  Ken Alfred Nagamatsu ,  William J. Sweet ,  James T. Kelliher ,  John S. Mason, Jr. ,  Jonah Paul Sengupta

IPC分类号： H01L29/778 ,  H01L29/15 ,  H01L29/66 ,  H01L21/56 ,  H01L23/31 ,  H01L29/06 ,  H01L21/02

摘要： A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.

公开(公告)号：US20200373384A1

公开(公告)日：2020-11-26

申请号：US16992244

申请日：2020-08-13

申请人： JOSEPHINE BEA CHANG ,  ERIC J. STEWART ,  KEN ALFRED NAGAMATSU ,  ROBERT S. HOWELL ,  SHALINI GUPTA

发明人： JOSEPHINE BEA CHANG ,  ERIC J. STEWART ,  KEN ALFRED NAGAMATSU ,  ROBERT S. HOWELL ,  SHALINI GUPTA

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L23/29 ,  H01L23/31 ,  H01L29/15 ,  H01L29/423 ,  H01L21/02 ,  H01L21/306 ,  H01L29/778 ,  H01L29/66

摘要： A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.