Invention Application
- Patent Title: SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
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Application No.: US16814517Application Date: 2020-03-10
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Publication No.: US20210036000A1Publication Date: 2021-02-04
- Inventor: Naoya YOSHIMURA , Satoshi NAGASHIMA
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2019-143072 20190802
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11582 ; G11C5/02 ; G11C5/06
Abstract:
A semiconductor memory device includes a first pillar. The first pillar includes a first portion and a second portion. The first portion includes a first semiconductor layer and a first insulating film on a side surface of the first semiconductor layer. The first pillar includes a first region that faces the first portion and a second region other than the first region. The second portion includes a first conductive film that is in contact with the first insulating film and a second insulating film. The second insulating film has a first thickness in a fourth direction within the second region and a second thickness in the second direction within the first region. The first thickness is greater than the second thickness.
Public/Granted literature
- US11600629B2 Semiconductor memory device and method of manufacturing semiconductor memory device Public/Granted day:2023-03-07
Information query
IPC分类:
