A vertical memory device is provided. The vertical memory device includes gate electrodes formed on a substrate and spaced apart from each other in a first direction substantially perpendicular to an upper surface of the substrate, the gate electrodes including a first gate electrode and a second gate electrode that is interposed between the first gate electrode and the substrate; a channel extending through the gate electrodes in the first direction; an insulating isolation pattern extending through the first gate electrode in the first direction, and spaced apart from the first gate electrode in a second direction substantially parallel to the upper surface of the substrate; and a blocking pattern disposed on an upper surface, a lower surface and a sidewall of each of the gate electrodes, the sidewall of the gate electrodes facing the channel. The insulating isolation pattern directly contacts the first gate electrode.