According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.