发明申请
- 专利标题: GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH ROBUST INNER SPACERS AND METHODS
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申请号: US16534317申请日: 2019-08-07
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公开(公告)号: US20210043727A1公开(公告)日: 2021-02-11
- 发明人: Julien Frougier , Ruilong Xie , Kangguo Cheng , Chanro Park
- 申请人: GLOBALFOUNDRIES INC.
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人地址: KY Grand Cayman
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L29/78 ; H01L29/423 ; H01L29/66
摘要:
A gate-all-around field effect transistor (GAAFET) and method. The GAAFET includes nanosheets, a gate around center portions of the nanosheets, and inner spacers aligned below end portions. The nanosheet end portions are tapered from the source/drain regions to the gate and the inner spacers are tapered from the gate to the source/drain regions. Each inner spacer includes: a first spacer layer, which has a uniform thickness and extends laterally from the gate to an adjacent source/drain region; a second spacer layer, which fills the space between a planar top surface of the first spacer layer and a tapered end portion of the nanosheet above; and, for all but the lowermost inner spacers, a third spacer layer, which is the same material as the second spacer layer and which fills the space between a planar bottom surface of the first spacer layer and a tapered end portion of the nanosheet below.
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