Invention Application
- Patent Title: SRAM Structure and Method
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Application No.: US16942278Application Date: 2020-07-29
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Publication No.: US20210098049A1Publication Date: 2021-04-01
- Inventor: Chih-Chuan Yang , Shih-Hao Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G11C11/412
- IPC: G11C11/412 ; G11C11/419 ; H01L27/11 ; H01L21/475

Abstract:
Semiconductor devices and methods are provided. In an embodiment, a semiconductor device includes a bias source, a memory cell array including a first region adjacent to the bias source and a second region away from the bias source, and a conductive line electrically coupled to the bias source, a first memory cell in the first region and a second memory cell in the second region. The first memory cell is characterized by a first alpha ratio and the second memory cell is characterized by a second alpha ratio smaller than the first alpha ratio.
Public/Granted literature
- US11367479B2 SRAM structure and method Public/Granted day:2022-06-21
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