- 专利标题： SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
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申请号： US17120689申请日： 2020-12-14
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公开(公告)号： US20210098307A1公开(公告)日： 2021-04-01
- 发明人: Lin-Yu HUANG , Sheng-Tsung WANG , Jia-Chuan YOU , Chia-Hao CHANG , Tien-Lu LIN , Yu-Ming LIN , Chih-Hao WANG
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/40 ; H01L21/3213 ; H01L27/088 ; H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L29/08
摘要：
Semiconductor device structures are provided. The semiconductor device structure includes a substrate and a first fin structure protruding from the substrate. The semiconductor device structure further includes a gate stack formed across the first fin structure and a first source/drain structure formed over the first fin structure adjacent to the gate stack. The semiconductor device structure further includes a contact structure formed over the first source/drain structure and a dielectric structure formed through the contact structure. In addition, a bottom surface of the contact structure is wider than a top surface of the contact structure.
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