Invention Application
- Patent Title: SEMICONDUCTOR DIE FOR DETERMINING LOAD OF THROUGH SILICON VIA AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
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Application No.: US17124762Application Date: 2020-12-17
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Publication No.: US20210104498A1Publication Date: 2021-04-08
- Inventor: SeungHan WOO , Je Min RYU , Reum OH , Moonhee OH , BumSuk LEE
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2018-0028545 20180312
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/48 ; H01L25/18 ; H01L23/00 ; G01R31/28

Abstract:
A semiconductor die may include a first delay circuit formed on a substrate and configured to delay a test signal, the first delay circuit including first delay stages connected in series, a second delay circuit formed on the substrate and configured to delay the test signal, the second delay circuit including second delay stages connected in series, at least one through silicon via connected to at least one output terminal of output terminals of the first delay stages, the at least one through silicon via penetrating through the substrate, and a load determinator configured to compare a first delay signal output from one of the first delay stages with a second delay signal output from one of the second delay stages and determine a load of the at least one through silicon via.
Public/Granted literature
- US11239210B2 Semiconductor die for determining load of through silicon via and semiconductor device including the same Public/Granted day:2022-02-01
Information query
IPC分类: