Invention Application
- Patent Title: VERTICAL CAPACITOR STRUCTURE, CAPACITOR COMPONENT, AND METHOD FOR MANUFACTURING THE VERTICAL CAPACITOR STRUCTURE
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Application No.: US17102258Application Date: 2020-11-23
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Publication No.: US20210104595A1Publication Date: 2021-04-08
- Inventor: Syu-Tang LIU , Huang-Hsien CHANG , Tsung-Tang TSAI , Hung-Jung TU
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522 ; H01L21/308 ; H01L21/02 ; H01L21/3105 ; H01L21/285

Abstract:
A vertical capacitor structure includes a substrate, at least a pillar, a first conductive layer, a first dielectric layer and a second conductive layer. The substrate defines a cavity. The pillar is disposed in the cavity. The first conductive layer covers and is conformal to the cavity of the substrate and the pillar, and is insulated from the substrate. The first dielectric layer covers and is conformal to the first conductive layer. The second conductive layer covers and is conformal to the first dielectric layer. The first conductive layer, the first dielectric layer and the second conductive layer jointly form a capacitor component.
Public/Granted literature
Information query
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