- 专利标题： STEPPED FIELD PLATES WITH PROXIMITY TO CONDUCTION CHANNEL AND RELATED FABRICATION METHODS
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申请号： US16600825申请日： 2019-10-14
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公开(公告)号： US20210111254A1公开(公告)日： 2021-04-15
- 发明人: Evan Jones , Terry Alcorn , Jia Guo , Fabian Radulescu , Scott Sheppard
- 申请人： Cree, Inc.
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L29/778 ; H01L29/66
摘要：
A transistor includes a semiconductor layer structure, a source electrode and a drain electrode on the semiconductor layer structure, a gate on a surface of the semiconductor layer structure between the source electrode and the drain electrode, and a field plate. The field plate includes a first portion adjacent the gate and a second portion adjacent the source or drain electrode. The second portion of the field plate is farther from the surface of the semiconductor layer structure than the first portion of the field plate, and is closer to the surface of the semiconductor layer structure than an extended portion of the gate. Related devices and fabrication methods are also discussed.
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