Invention Application
- Patent Title: Methods for Forming Stacked Layers and Devices Formed Thereof
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Application No.: US16870389Application Date: 2020-05-08
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Publication No.: US20210125859A1Publication Date: 2021-04-29
- Inventor: Shih-Yao Lin , Kuei-Yu Kao , Chen-Ping Chen , Chih-Han Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/306 ; H01L21/3065
Abstract:
A method includes etching a semiconductor substrate to form a trench, with the semiconductor substrate having a sidewall facing the trench, and depositing a first semiconductor layer extending into the trench. The first semiconductor layer includes a first bottom portion at a bottom of the trench, and a first sidewall portion on the sidewall of the semiconductor substrate. The first sidewall portion is removed to reveal the sidewall of the semiconductor substrate. The method further includes depositing a second semiconductor layer extending into the trench, with the second semiconductor layer having a second bottom portion over the first bottom portion, and a second sidewall portion contacting the sidewall of the semiconductor substrate. The second sidewall portion is removed to reveal the sidewall of the semiconductor substrate.
Public/Granted literature
- US11488858B2 Methods for forming stacked layers and devices formed thereof Public/Granted day:2022-11-01
Information query
IPC分类:
