Techniques disclosed herein can be used to improve cross-temperature coverage of memory devices and improve memory device reliability in cross-temperature conditions. More specifically, a memory trim set can be selected from multiple candidate memory trim sets when performing a memory operation (such as a memory write operation), based on a temperature metric and a P/E cycle metric for the memory device. The candidate memory trim sets include multiple respective memory trim values (e.g., memory configuration parameters, such as program voltage step size, program pulse width, program verify level, etc., as discussed above) for performing the memory operation. The temperature metric can be indicative of a temperature of at least a region of the memory device (e.g., the entire device, a memory plane, a memory block, etc.), and the P/E cycle metric can be indicative of a number of P/E cycles performed by the memory device within a selected time interval.