- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ETCHING GAS
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申请号： US17197544申请日： 2021-03-10
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公开(公告)号： US20210193475A1公开(公告)日： 2021-06-24
- 发明人: Takaya ISHINO , Toshiyuki SASAKI , Mitsuharu SHIMODA , Hisashi SHIMIZU
- 申请人： Kioxia Corporation , KANTO DENKA KOGYO CO., LTD.
- 申请人地址： JP Tokyo; JP Tokyo
- 专利权人： Kioxia Corporation,KANTO DENKA KOGYO CO., LTD.
- 当前专利权人： Kioxia Corporation,KANTO DENKA KOGYO CO., LTD.
- 当前专利权人地址： JP Tokyo; JP Tokyo
- 优先权： JP2018-169983 20180911
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/3213
摘要：
In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.
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