公开(公告)号：US20230307244A1

公开(公告)日：2023-09-28

申请号：US18325640

申请日：2023-05-30

申请人： KIOXIA CORPORATION ,  KANTO DENKA KOGYO CO., LTD.

发明人： Takaya ISHINO ,  Toshiyuki SASAKI ,  Mitsuharu SHIMODA ,  Hisashi SHIMIZU

IPC分类号： H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  H01L21/3213

摘要： In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

公开(公告)号：US20210193475A1

公开(公告)日：2021-06-24

申请号：US17197544

申请日：2021-03-10

申请人： Kioxia Corporation ,  KANTO DENKA KOGYO CO., LTD.

发明人： Takaya ISHINO ,  Toshiyuki SASAKI ,  Mitsuharu SHIMODA ,  Hisashi SHIMIZU

IPC分类号： H01L21/3065 ,  H01L21/3213

摘要： In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

公开(公告)号：US20220384180A1

公开(公告)日：2022-12-01

申请号：US17879108

申请日：2022-08-02

申请人： Kioxia Corporation

发明人： Takaya ISHINO ,  Atsushi Takahashi ,  Kazunori Zaima

IPC分类号： H01L21/02 ,  H01L21/027 ,  H01L27/11582 ,  H01L21/311 ,  H01L27/11575 ,  H01L27/1157

摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.

公开(公告)号：US20220301925A1

公开(公告)日：2022-09-22

申请号：US17475646

申请日：2021-09-15

申请人： Kioxia Corporation

发明人： Takaya ISHINO

IPC分类号： H01L21/768 ,  H01L21/02

摘要： A method of manufacturing a semiconductor device according to an embodiment includes: forming a multilayer structure in which first insulating layers and second insulating layers are alternately stacked; and forming a plurality of contact holes in the multilayer structure, each of the contract holes having a different aspect ratio, the forming of one of the plurality of contact holes including a first step of etching at least one of the first insulating layers and a second step of etching at least one of the second insulating layers, and the second step is performed by using a mixed gas including a CHF gas which contains carbon, hydrogen, and fluorine and hydrogen gas.