- 专利标题: CUREABLE FORMULATIONS FOR FORMING LOW-k DIELECTRIC SILICON-CONTAINING FILMS USING POLYCARBOSILAZANE
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申请号: US16731728申请日: 2019-12-31
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公开(公告)号: US20210198429A1公开(公告)日: 2021-07-01
- 发明人: Yumin LIU , Jean-Marc GIRARD , Peng ZHANG , Fan QIN , Gennadiy ITOV , Fabrizio MARCHEGIANI , Thomas J. LARRABEE
- 申请人: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
- 申请人地址: FR Paris; US CA Fremont
- 专利权人: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude,American Air Liquide, Inc.
- 当前专利权人: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude,American Air Liquide, Inc.
- 当前专利权人地址: FR Paris; US CA Fremont
- 主分类号: C08G77/12
- IPC分类号: C08G77/12 ; B05D1/00 ; B05D3/02 ; C08G77/08 ; C08G77/26
摘要:
Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.
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