公开(公告)号：US20230095074A1

公开(公告)日：2023-03-30

申请号：US17977619

申请日：2022-10-31

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin LIU ,  Jean-Marc GIRARD ,  Peng ZHANG ,  Fan QIN ,  Gennadiy ITOV ,  Fabrizio MARCHEGIANI ,  Thomas J. LARRABEE ,  Venkateswara R. PALLEM

IPC分类号： C09D183/14

摘要： A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.

公开(公告)号：US20170178923A1

公开(公告)日：2017-06-22

申请号：US15396220

申请日：2016-12-30

申请人： American Air Liquide, Inc. ,  L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  Air Liquide Electronics U.S. LP

发明人： Vijay SURLA ,  Rahul GUPTA ,  Hui SUN ,  Venkateswara R. PALLEM ,  Nathan STAFFORD ,  Fabrizio MARCHEGIANI

IPC分类号： H01L21/311 ,  H01L21/308 ,  H01L27/115 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L27/11582 ,  H01L28/00

摘要： A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula CaHxFyIz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 when a=2, and x+y+z=6 or 8 when a=3; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated iodine-containing etching compound capable of etching the silicon-containing film from the substrate.

公开(公告)号：US20210198429A1

公开(公告)日：2021-07-01

申请号：US16731728

申请日：2019-12-31

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Yumin LIU ,  Jean-Marc GIRARD ,  Peng ZHANG ,  Fan QIN ,  Gennadiy ITOV ,  Fabrizio MARCHEGIANI ,  Thomas J. LARRABEE

IPC分类号： C08G77/12 ,  B05D1/00 ,  B05D3/02 ,  C08G77/08 ,  C08G77/26

摘要： Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH2— moieties, either as terminal groups (—SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

公开(公告)号：US20210407817A1

公开(公告)日：2021-12-30

申请号：US16913696

申请日：2020-06-26

申请人： American Air Liquide, Inc.

发明人： Fabrizio MARCHEGIANI

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L27/1157 ,  H01L27/11578

摘要： Disclosed are methods for etching a silicon-containing film to form a patterned structure, methods for reinforcing and/or strengthening and/or minimizing damage of a patterned mask layer while forming a patterned structure and methods for increasing etch resistance of a patterned mask layer in a process of forming a patterned structure. The methods include using an activated iodine-containing etching compound having the formula CnHxFyIz, wherein 4≤n≤10, 0≤x≤21, 0≤y≤21, and 1≤z≤4 as an etching gas. The activated iodine-containing etching compound produces iodine ions, which are implanted into the patterned hardmask layer, thereby strengthening the patterned mask layer.

公开(公告)号：US20230331926A1

公开(公告)日：2023-10-19

申请号：US18009668

申请日：2021-06-18

申请人： American Air Liquide, Inc. ,  L' Air Liquide, Société Anonyme pour l'Etude et I'Exploitation des Procédés Georges Claude

发明人： Venkateswara R. PALLEM ,  Jean-Marc GIRARD ,  Nicoas BLASCO ,  Claudia FAFARD ,  Fabrizio MARCHEGIANI

IPC分类号： C08G77/62 ,  C09D183/16

CPC分类号： C08G77/62 ,  C09D183/16

摘要： Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

公开(公告)号：US20230197465A1

公开(公告)日：2023-06-22

申请号：US17555094

申请日：2021-12-17

申请人： American Air Liquide,Inc.

发明人： Fabrizio MARCHEGIANI

IPC分类号： H01L21/311 ,  H01L21/32

CPC分类号： H01L21/31116 ,  H01L21/32 ,  H01L21/033

摘要： A method comprises: introducing a vapor of an oxygen and iodine-containing etching compound into a chamber that contains a substrate having a silicon-containing film deposited thereon and a patterned mask layer deposited on the silicon-containing layer, wherein the oxygen and iodine-containing etching compound has the formula CnHxFyIzOe, wherein 0≤n≤10, 0≤x≤21, 0≤y≤21, 1≤z≤4 and 1≤e≤2; activating a plasma to produce an activated oxygen and iodine-containing etching compound; and allowing an etching reaction to proceed between the activated oxygen and iodine-containing etching compound and the silicon-containing film to selectively etch the silicon-containing film from the patterned mask layer, thereby forming a patterned structure.

公开(公告)号：US20230193460A1

公开(公告)日：2023-06-22

申请号：US17555140

申请日：2021-12-17

申请人： American Air Liquide, Inc.

发明人： Phong NGUYEN ,  Fabrizio MARCHEGIANI ,  Nathan STAFFORD ,  Xiangyu GUO

IPC分类号： C23C16/455 ,  C23C16/56 ,  C23C16/505

CPC分类号： C23C16/45534 ,  C23C16/56 ,  C23C16/505 ,  C23C16/45536 ,  C23C16/45553

摘要： A method for depositing an iodine-containing film on a substrate material comprises: exposing the substrate material to a vapor of a film-forming composition comprising an iodine-containing precursor having a formula of CaHxIyFz, wherein a=1-10, x≥0, y≥1, z≥0, x+y+z=a, 2a or 2a+2; provided that when a=1, x=2 and z=0, y is not equal to 2, and depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a vapor deposition method. The method further comprises exposing the substrate material to a vapor of a co-reactant nitrogen-containing molecule having a general formula CxHyFzNH, where x=1-6, y=0-13, z=0-13, and a=1-2 or CxHyFzN—R1, where x=1-6, y=0-13, z=0-13, and R1 is a C1-C5 hydrocarbon.