- 专利标题： METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME
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申请号： US17195648申请日： 2021-03-09
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公开(公告)号： US20210202307A1公开(公告)日： 2021-07-01
- 发明人: Da-Jun Lin , Bin-Siang Tsai
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu City
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu City
- 优先权： TW107117189 20180521
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522 ; H01L23/532
摘要：
A method for fabricating semiconductor device includes the steps of: forming a dielectric layer on a substrate; forming a trench in the dielectric layer; forming a first liner in the trench, wherein the first liner comprises Co—Ru alloy; forming a metal layer on the first liner; and planarizing the metal layer and the first liner to form a metal interconnection.
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