发明申请
- 专利标题： ETCHING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM
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申请号： US17160460申请日： 2021-01-28
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公开(公告)号： US20210233777A1公开(公告)日： 2021-07-29
- 发明人: Hironari SASAGAWA , Maju TOMURA
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2020-012241 20200129
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/3065 ; H01L21/02 ; H01J37/32
摘要：
An etching method includes forming a film on a surface of a substrate. The substrate has a region at least partially made of silicon oxide and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The film is formed to correct a shape of a side wall defining the opening to a vertical shape. The etching method further includes etching the region.
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