According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, and a nitride member. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The nitride member includes a first nitride layer and a second nitride layer. The first nitride layer includes first, second, and third partial regions. The first electrode includes first, second, and third conductive portions, and a first conductive layer. The first, second, third conductive portions, and a portion of the second nitride layer are between the first partial region and the first conductive layer. The first, second, and third conductive portions are electrically connected to the first conductive layer. The second nitride layer includes a first region between the first and second conductive portions.