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公开(公告)号：US20240274703A1
公开(公告)日：2024-08-15
申请号：US18451218
申请日：2023-08-17
发明人： Yosuke KAJIWARA , Miyoko SHIMADA , Kento MINAMIKAWA , Hiroshi ONO , Daimotsu KATO , Masahiko KURAGUCHI
IPC分类号： H01L29/778 , H01L29/20 , H01L29/66
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66462
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1
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公开(公告)号：US20200373422A1
公开(公告)日：2020-11-26
申请号：US16799901
申请日：2020-02-25
发明人： Masahiko KURAGUCHI , Yosuke KAJIWARA , Aya SHINDOME , Hiroshi ONO , Daimotsu KATO , Akira MUKAI
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/45 , H01L29/423 , H01L29/66
摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first conductive part, first and second insulating layers. The third electrode includes first and second portions. The first portion is between the first electrode and the second electrode. The first semiconductor layer includes first, second, third, fourth and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor layer includes first and second semiconductor regions. The first conductive part is electrically connected to the first electrode. The first insulating layer includes a first insulating portion. The second insulating layer includes first and second insulating regions.
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公开(公告)号：US20200027978A1
公开(公告)日：2020-01-23
申请号：US16292387
申请日：2019-03-05
IPC分类号： H01L29/778 , H01L29/205 , H01L29/20 , H01L29/423 , H01L29/51 , H01L29/66 , H01L21/28
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor layers, a nitride layer, and an oxide layer. A direction from the second electrode toward the first electrode is aligned with a first direction. A position in the first direction of the third electrode is between the first electrode and the second electrode in the first direction. The first semiconductor layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions in the first direction. The second partial region is between the third and fifth partial regions in the first direction. The nitride layer includes first and second nitride regions. The second semiconductor layer includes first and second semiconductor regions. The oxide layer includes silicon and oxygen. The oxide layer includes first to third oxide regions.
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4.发明申请公开(公告)号：US20210384337A1
公开(公告)日：2021-12-09
申请号：US17407851
申请日：2021-08-20
发明人： Daimotsu KATO , Yosuke KAJIWARA , Akira MUKAI , Aya SHINDOME , Hiroshi ONO , Masahiko KURAGUCHI
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/06 , H01L29/66 , H01L29/423
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1−x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1−x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1−x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.
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公开(公告)号：US20200328146A1
公开(公告)日：2020-10-15
申请号：US16802295
申请日：2020-02-26
IPC分类号： H01L23/528 , H01L23/535
摘要： According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor layer, a first extension conductive layer, first and second electrode connection portions, and an insulating member. The first to fourth electrodes extend along a first direction. The first electrode is between the second and third electrodes in a second direction. The second direction crosses the first direction. The first extension conductive layer extends along the first direction and is electrically connected to the first electrode. The fourth electrode is between the first and third electrodes in the second direction. The first electrode connection portion is electrically connected to the first electrode. The second electrode connection portion is electrically connected to the second and fourth electrodes. The insulating member includes a first insulating portion. The first insulating portion is between the second electrode connection portion and a portion of the first electrode.
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6.发明公开公开(公告)号：US20230268430A1
公开(公告)日：2023-08-24
申请号：US18307099
申请日：2023-04-26
发明人： Daimotsu KATO , Yosuke KAJIWARA , Akira MUKAI , Aya SHINDOME , Hiroshi ONO , Masahiko KURAGUCHI
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/06 , H01L29/66 , H01L29/423
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/205 , H01L29/0653 , H01L29/2006 , H01L29/66462 , H01L29/4236
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1−x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1−x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1−x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.
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公开(公告)号：US20210234012A1
公开(公告)日：2021-07-29
申请号：US17015299
申请日：2020-09-09
发明人： Hiroshi ONO , Yosuke KAJIWARA , Masahiko KURAGUCHI
IPC分类号： H01L29/417 , H01L29/20 , H01L29/205 , H01L29/778
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, and a nitride member. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The nitride member includes a first nitride layer and a second nitride layer. The first nitride layer includes first, second, and third partial regions. The first electrode includes first, second, and third conductive portions, and a first conductive layer. The first, second, third conductive portions, and a portion of the second nitride layer are between the first partial region and the first conductive layer. The first, second, and third conductive portions are electrically connected to the first conductive layer. The second nitride layer includes a first region between the first and second conductive portions.
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公开(公告)号：US20200335587A1
公开(公告)日：2020-10-22
申请号：US16787351
申请日：2020-02-11
发明人： Hiroshi ONO , Akira MUKAI , Yosuke KAJIWARA , Daimotsu KATO , Aya SHINDOME , Masahiko KURAGUCHI
IPC分类号： H01L29/205 , H01L29/207 , H01L29/20 , H01L29/778 , H01L29/423 , H01L29/51 , H01L29/40 , H01L23/29
摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, and a first compound member. A position of the third electrode is between a position of the second electrode and a position of the first electrode. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the third and first partial regions. The fifth partial region is between the second and third partial regions. The second semiconductor layer includes first, second, and third semiconductor regions. The third semiconductor region is between the first partial region and the first electrode. The first compound member includes first compound portions between the third semiconductor region and the first electrode. A portion of the first electrode is between one of the first compound portions and an other one of the first compound portions.
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公开(公告)号：US20240047534A1
公开(公告)日：2024-02-08
申请号：US18172856
申请日：2023-02-22
IPC分类号： H01L29/205 , H01L21/02 , H01L29/20 , H01L29/423
CPC分类号： H01L29/205 , H01L21/02164 , H01L21/02178 , H01L21/0254 , H01L29/2003 , H01L29/42368
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first layer, a second layer, and a first insulating layer. The third electrode includes a first electrode portion. The first semiconductor region includes Alx1Ga1-x1N (0≤x1
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公开(公告)号：US20240038849A1
公开(公告)日：2024-02-01
申请号：US18172824
申请日：2023-02-22
IPC分类号： H01L29/205 , H01L21/02 , H01L29/20 , H01L29/423
CPC分类号： H01L29/205 , H01L21/02164 , H01L21/02178 , H01L21/0254 , H01L29/2003 , H01L29/42368
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first nitride region, a second nitride region, and a third nitride region. The first nitride region includes Alx1Ga1-x1N (0≤x1
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