- 专利标题: REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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申请号: US17227655申请日: 2021-04-12
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公开(公告)号: US20210255536A1公开(公告)日: 2021-08-19
- 发明人: Yohei IKEBE , Tsutomu SHOKI , Takahiro ONOUE , Hirofumi KOZAKAI
- 申请人: HOYA CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: HOYA CORPORATION
- 当前专利权人: HOYA CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2017-040043 20170303,JP2017-107394 20170531
- 主分类号: G03F1/24
- IPC分类号: G03F1/24 ; G03F1/26
摘要:
Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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