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公开(公告)号：US20210255536A1
公开(公告)日：2021-08-19
申请号：US17227655
申请日：2021-04-12
申请人： HOYA CORPORATION
发明人： Yohei IKEBE , Tsutomu SHOKI , Takahiro ONOUE , Hirofumi KOZAKAI
摘要： Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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公开(公告)号：US20210208498A1
公开(公告)日：2021-07-08
申请号：US17056713
申请日：2019-05-24
申请人： HOYA CORPORATION
发明人： Yohei IKEBE , Tsutomu SHOKI
IPC分类号： G03F1/32
摘要： Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
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公开(公告)号：US20200310239A1
公开(公告)日：2020-10-01
申请号：US16754306
申请日：2018-10-16
申请人： HOYA CORPORATION
发明人： Kazuhiro HAMAMOTO , Tsutomu SHOKI , Yohei IKEBE
摘要： A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.
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公开(公告)号：US20180149962A1
公开(公告)日：2018-05-31
申请号：US15580331
申请日：2016-06-08
申请人： HOYA CORPORATION
摘要： A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.
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5.发明申请MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD 审中-公开掩模基板，具有多层反射膜的基板，透射掩模层，反射掩模和半导体器件制造方法公开(公告)号：US20170010527A1
公开(公告)日：2017-01-12
申请号：US15275719
申请日：2016-09-26
申请人： HOYA CORPORATION
发明人： Toshihiko ORIHARA , Kazuhiro HAMAMOTO , Hirofumi KOZAKAI , Youichi USUI , Tsutomu SHOKI , Junichi HORIKAWA
IPC分类号： G03F1/48 , H01L21/308 , G03F7/20 , G03F1/22 , G03F7/16
CPC分类号： G03F1/48 , B82Y10/00 , B82Y40/00 , C03C3/06 , C03C17/3435 , C03C17/3626 , C03C17/3636 , C03C17/3639 , C03C17/3649 , C03C17/3665 , C03C23/0075 , C03C2201/42 , C03C2218/33 , G02B5/08 , G02B5/0816 , G02B5/0891 , G03F1/22 , G03F7/16 , G03F7/2002 , G03F7/2004 , G03F7/70733 , H01L21/3081 , H01L21/3085
摘要： Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
摘要翻译： 公开了一种用于光刻的掩模空白基板，其中形成基板的转印图案的主表面具有通过测量1μm×1的面积获得的不大于0.15nm的均方根粗糙度（Rms） 具有原子力显微镜，并且在不小于1μm-1的空间频率下具有不大于10nm 4的功率谱密度。
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6.发明公开公开(公告)号：US20230266658A1
公开(公告)日：2023-08-24
申请号：US18142223
申请日：2023-05-02
申请人： HOYA CORPORATION
发明人： Kazuhiro HAMAMOTO , Tsutomu SHOKI
CPC分类号： G03F1/24 , G03F1/42 , G03F7/2004
摘要： A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
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公开(公告)号：US20220206379A1
公开(公告)日：2022-06-30
申请号：US17603529
申请日：2020-06-18
申请人： HOYA CORPORATION
发明人： Masanori NAKAGAWA , Tsutomu SHOKI
IPC分类号： G03F1/24
摘要： Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern when EUV exposure is performed in an atmosphere comprising a hydrogen gas.
A reflective mask blank comprises: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film. The absorber film comprises an absorption layer and a reflectance adjustment layer. The absorption layer comprises tantalum (Ta), boron (B), nitrogen (N), and at least one additive element selected from hydrogen (H) and deuterium (D). A content of the boron (B) in the absorption layer is more than 5 atomic %. A content of the additive element in the absorption layer is 0.1 atomic % or more and 30 atomic % or less.-
公开(公告)号：US20210294202A1
公开(公告)日：2021-09-23
申请号：US17325627
申请日：2021-05-20
申请人： HOYA CORPORATION
发明人： Tsutomu SHOKI , Takahiro ONOUE
摘要： A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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9.发明申请公开(公告)号：US20190265585A1
公开(公告)日：2019-08-29
申请号：US16343505
申请日：2017-10-18
申请人： HOYA CORPORATION
发明人： Yohei IKEBE , Tsutomu SHOKI
IPC分类号： G03F1/24 , G03F7/20 , G03F1/38 , G03F1/54 , H01L21/033
摘要： The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).
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公开(公告)号：US20190079382A1
公开(公告)日：2019-03-14
申请号：US16084332
申请日：2017-03-21
申请人： HOYA CORPORATION
发明人： Tsutomu SHOKI , Takahiro ONOUE
摘要： A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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