- 专利标题: PHOTOMASK INCLUDING FIDUCIAL MARK AND METHOD OF MAKING SEMICONDUCTOR DEVICE USING THE PHOTOMASK
-
申请号: US17335944申请日: 2021-06-01
-
公开(公告)号: US20210286255A1公开(公告)日: 2021-09-16
- 发明人: Hsin-Chang LEE , Ping-Hsun LIN , Chih-Cheng LIN , Chia-Jen CHEN
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G03F1/44
- IPC分类号: G03F1/44 ; G03F1/84 ; G03F1/42
摘要:
A method of making a semiconductor device includes forming at least one fiducial mark on a photomask outside of a pattern region of the photomask, and the at least one fiducial mark includes identifying information for the photomask. The method includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern. The method includes transferring the pattern from the photomask to a wafer.
公开/授权文献
信息查询